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Electron mobility dependence on annealing temperature of W/HfO2 gate stacks: The role of the interfacial layer.

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Title: Electron mobility dependence on annealing temperature of W/HfO2 gate stacks: The role of the interfacial layer.
Authors: Callegari, A.1 sandro@us.ibm.com, Jamison, P.1, Neumayer, D.1, Feely, F. Mc.1, Shepard, J.2, Andreoni, W.3, Curioni, A.3, Pignedoli, C.3
Source: Journal of Applied Physics. 1/15/2006, Vol. 99 Issue 2, p023709. 5p. 5 Graphs.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 19601211
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 1/15/2006, Vol. 99 Issue 2, p023709. 5p. 5 Graphs.
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        Value: 10.1063/1.2163980
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 023709
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      – TitleFull: Electron mobility dependence on annealing temperature of W/HfO2 gate stacks: The role of the interfacial layer.
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              Text: 1/15/2006
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