Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4.

Saved in:

Bibliographic Details
Title:	Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4.
Authors:	Hebali, Mourad^1,2 mourad.hebali@univ-mascara.dz, Bouguenna, Ibrahim Farouk^1,2, Maachou, Abdelkader^1,2, Bennaoum, Menouer^1,2, Kada, Benyekhlef^1,2, Ibari, Benaoumeur^1,2, Altun, Mustafa³
Source:	Journal of Engineering Science & Technology Review. 2026, Vol. 19 Issue 3, p14-20. 7p.
Database:	Academic Search Ultimate

Description
ISSN:	17919320
DOI:	10.25103/jestr.193.02