APA (7th ed.) Citation

Hebali, M., Bouguenna, I. F., Maachou, A., Bennaoum, M., Kada, B., Ibari, B., & Altun, M. (2026). Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4. Journal of Engineering Science & Technology Review, 19(3), 14. https://doi.org/10.25103/jestr.193.02

Chicago Style (17th ed.) Citation

Hebali, Mourad, Ibrahim Farouk Bouguenna, Abdelkader Maachou, Menouer Bennaoum, Benyekhlef Kada, Benaoumeur Ibari, and Mustafa Altun. "Prediction of Indium Fraction Effect on Electrical Behavior of 90 Nm InxGa1-xAs MOSFETs Using BSIM4." Journal of Engineering Science & Technology Review 19, no. 3 (2026): 14. https://doi.org/10.25103/jestr.193.02.

MLA (9th ed.) Citation

Hebali, Mourad, et al. "Prediction of Indium Fraction Effect on Electrical Behavior of 90 Nm InxGa1-xAs MOSFETs Using BSIM4." Journal of Engineering Science & Technology Review, vol. 19, no. 3, 2026, p. 14, https://doi.org/10.25103/jestr.193.02.