Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4.
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| Title: | Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm In |
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| Authors: | Hebali, Mourad1,2 mourad.hebali@univ-mascara.dz, Bouguenna, Ibrahim Farouk1,2, Maachou, Abdelkader1,2, Bennaoum, Menouer1,2, Kada, Benyekhlef1,2, Ibari, Benaoumeur1,2, Altun, Mustafa3 |
| Source: | Journal of Engineering Science & Technology Review. 2026, Vol. 19 Issue 3, p14-20. 7p. |
| Database: | Academic Search Ultimate |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 196102411 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm In<subscript>x</subscript>Ga<subscript>1-x</subscript>As MOSFETs Using BSIM4. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hebali%2C+Mourad%22">Hebali, Mourad</searchLink><relatesTo>1,2</relatesTo><i> mourad.hebali@univ-mascara.dz</i><br /><searchLink fieldCode="AR" term="%22Bouguenna%2C+Ibrahim+Farouk%22">Bouguenna, Ibrahim Farouk</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Maachou%2C+Abdelkader%22">Maachou, Abdelkader</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bennaoum%2C+Menouer%22">Bennaoum, Menouer</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kada%2C+Benyekhlef%22">Kada, Benyekhlef</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ibari%2C+Benaoumeur%22">Ibari, Benaoumeur</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Altun%2C+Mustafa%22">Altun, Mustafa</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Engineering+Science+%26+Technology+Review%22">Journal of Engineering Science & Technology Review</searchLink>. 2026, Vol. 19 Issue 3, p14-20. 7p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=196102411 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.25103/jestr.193.02 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 14 Titles: – TitleFull: Prediction of Indium Fraction Effect on Electrical Behavior of 90 nm InxGa1-xAs MOSFETs Using BSIM4. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hebali, Mourad – PersonEntity: Name: NameFull: Bouguenna, Ibrahim Farouk – PersonEntity: Name: NameFull: Maachou, Abdelkader – PersonEntity: Name: NameFull: Bennaoum, Menouer – PersonEntity: Name: NameFull: Kada, Benyekhlef – PersonEntity: Name: NameFull: Ibari, Benaoumeur – PersonEntity: Name: NameFull: Altun, Mustafa IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: 2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 17919320 Numbering: – Type: volume Value: 19 – Type: issue Value: 3 Titles: – TitleFull: Journal of Engineering Science & Technology Review Type: main |
| ResultId | 1 |