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Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.

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Bibliographic Details
Title: Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.
Authors: Mahapatra, R.1 rajat.mahapatra@ncl.ac.uk, Poolamai, N.1, Chattopadhyay, S.1, Wright, N. G.1, Chakraborty, Amit K.2, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3
Source: Applied Physics Letters. 2/13/2006, Vol. 88 Issue 7, p072910. 3p. 5 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00036951
DOI:10.1063/1.2173713