Sachdeva, R., Istratov, A., Deenapanray, P., & Weber, E. (2006). Electrical properties and diffusion behavior of hafnium in single crystal silicon. Applied Physics A: Materials Science & Processing, 84(4), 351. https://doi.org/10.1007/s00339-006-3637-6
Chicago Style (17th ed.) CitationSachdeva, R., A.A Istratov, P.N.K Deenapanray, and E.R Weber. "Electrical Properties and Diffusion Behavior of Hafnium in Single Crystal Silicon." Applied Physics A: Materials Science & Processing 84, no. 4 (2006): 351. https://doi.org/10.1007/s00339-006-3637-6.
MLA (9th ed.) CitationSachdeva, R., et al. "Electrical Properties and Diffusion Behavior of Hafnium in Single Crystal Silicon." Applied Physics A: Materials Science & Processing, vol. 84, no. 4, 2006, p. 351, https://doi.org/10.1007/s00339-006-3637-6.