Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C–SiC(100) 3×2.
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| Title: | Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C–SiC(100) 3×2. |
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| Authors: | Roy, J.1, Aristov, V. Yu.1,2, Radtke, C.1,3, Jaffrennou, P.1, Enriquez, H.1, Soukiassian, P.1 psoukiassian@cea.fr, Moras, P.4, Spezzani, C.4, Crotti, C.4, Perfetti, P.4 |
| Source: | Applied Physics Letters. 7/24/2006, Vol. 89 Issue 4, p042114. 3p. 1 Diagram, 3 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.2243801 |
