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Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C–SiC(100) 3×2.

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Title: Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C–SiC(100) 3×2.
Authors: Roy, J.1, Aristov, V. Yu.1,2, Radtke, C.1,3, Jaffrennou, P.1, Enriquez, H.1, Soukiassian, P.1 psoukiassian@cea.fr, Moras, P.4, Spezzani, C.4, Crotti, C.4, Perfetti, P.4
Source: Applied Physics Letters. 7/24/2006, Vol. 89 Issue 4, p042114. 3p. 1 Diagram, 3 Graphs.
Database: Academic Search Ultimate
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 7/24/2006, Vol. 89 Issue 4, p042114. 3p. 1 Diagram, 3 Graphs.
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