Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
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| Title: | Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources |
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| Authors: | Begotti, M.1, Longo, M.1 massimo.longo@fis.unipr.it, Magnanini, R.1, Parisini, A.1, Tarricone, L.1, Bocchi, C.2, Germini, F.2, Lazzarini, L.2, Nasi, L.2, Geddo, M.1,3 |
| Source: | Applied Surface Science. Jan2004, Vol. 222 Issue 1-4, p423-431. 9p. |
| Database: | Academic Search Ultimate |
| ISSN: | 01694332 |
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| DOI: | 10.1016/j.apsusc.2003.09.011 |
