Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
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| Title: | Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources |
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| Authors: | Begotti, M.1, Longo, M.1 massimo.longo@fis.unipr.it, Magnanini, R.1, Parisini, A.1, Tarricone, L.1, Bocchi, C.2, Germini, F.2, Lazzarini, L.2, Nasi, L.2, Geddo, M.1,3 |
| Source: | Applied Surface Science. Jan2004, Vol. 222 Issue 1-4, p423-431. 9p. |
| Database: | Academic Search Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 22238384 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=22238384 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.apsusc.2003.09.011 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 423 Titles: – TitleFull: Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Begotti, M. – PersonEntity: Name: NameFull: Longo, M. – PersonEntity: Name: NameFull: Magnanini, R. – PersonEntity: Name: NameFull: Parisini, A. – PersonEntity: Name: NameFull: Tarricone, L. – PersonEntity: Name: NameFull: Bocchi, C. – PersonEntity: Name: NameFull: Germini, F. – PersonEntity: Name: NameFull: Lazzarini, L. – PersonEntity: Name: NameFull: Nasi, L. – PersonEntity: Name: NameFull: Geddo, M. IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 01 Text: Jan2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 01694332 Numbering: – Type: volume Value: 222 – Type: issue Value: 1-4 Titles: – TitleFull: Applied Surface Science Type: main |
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