Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.
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| Title: | Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. |
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| Authors: | Harding, R.1, Davies, G.1 gordon.davies@kcl.ac.uk, Tan, J.1, Coleman, P. G.2, Burrows, C. P.2, Wong-Leung, J.3 |
| Source: | Journal of Applied Physics. 10/1/2006, Vol. 100 Issue 7, p073501. 4p. 4 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.2354332 |
