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Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.

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Title: Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.
Authors: Harding, R.1, Davies, G.1 gordon.davies@kcl.ac.uk, Tan, J.1, Coleman, P. G.2, Burrows, C. P.2, Wong-Leung, J.3
Source: Journal of Applied Physics. 10/1/2006, Vol. 100 Issue 7, p073501. 4p. 4 Graphs.
Database: Academic Search Ultimate
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  Data: Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 10/1/2006, Vol. 100 Issue 7, p073501. 4p. 4 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=22767564
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      – Type: doi
        Value: 10.1063/1.2354332
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 073501
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      – TitleFull: Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.
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            NameFull: Harding, R.
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            NameFull: Davies, G.
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            NameFull: Tan, J.
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            NameFull: Coleman, P. G.
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            NameFull: Burrows, C. P.
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            – D: 01
              M: 10
              Text: 10/1/2006
              Type: published
              Y: 2006
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