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High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks.

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Bibliographic Details
Title: High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks.
Authors: Renault, O.1, Fourdrinier, L.1, Martinez, E.1, Clavelier, L.1, Leroyer, C.1, Barrett, N.2, Crotti, C.3
Source: Applied Physics Letters. 1/29/2007, Vol. 90 Issue 5, p052112-N.PAG. 3p. 1 Chart, 2 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00036951
DOI:10.1063/1.2435512