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High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks.

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Bibliographic Details
Title: High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks.
Authors: Renault, O.1, Fourdrinier, L.1, Martinez, E.1, Clavelier, L.1, Leroyer, C.1, Barrett, N.2, Crotti, C.3
Source: Applied Physics Letters. 1/29/2007, Vol. 90 Issue 5, p052112-N.PAG. 3p. 1 Chart, 2 Graphs.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 23969067
AccessLevel: 2
PubType: Academic Journal
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  Data: High-resolution photoelectron spectroscopy of Ge-based HfO<subscript>2</subscript> gate stacks.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>. 1/29/2007, Vol. 90 Issue 5, p052112-N.PAG. 3p. 1 Chart, 2 Graphs.
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        Value: 10.1063/1.2435512
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        Text: English
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        StartPage: 052112
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      – TitleFull: High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks.
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            NameFull: Martinez, E.
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              Text: 1/29/2007
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              Y: 2007
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