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Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.

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Bibliographic Details
Title: Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.
Authors: Li, J. Z.1, Bai, J.1, Park, J.-S.1, Adekore, B.1, Fox, K.1, Carroll, M.1, Lochtefeld, A.1, Shellenbarger, Z.2
Source: Applied Physics Letters. 7/9/2007, Vol. 91 Issue 2, p021114. 3p. 2 Diagrams, 1 Graph.
Database: Academic Search Ultimate
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