GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION.

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Bibliographic Details
Title: GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION.
Authors: Liu, G. X.1,2 gxliucn@yahoo.com, Shan, F. K.1,2 fukaishan@yahoo.com, Lee, W. J.2 leewj@deu.ac.kr, Shin, B. C.2, Kim, S. C.3, Kim, H. S.4, Cho, C. R.5
Source: Integrated Ferroelectrics. 2007, Vol. 94 Issue 1, p11-20. 10p. 6 Graphs.
Database: Academic Search Ultimate
Description
ISSN:10584587
DOI:10.1080/10584580701755716