Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient.

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Bibliographic Details
Title:	Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient.
Authors:	Nipoti, R., Parisini, A.
Source:	Philosophical Magazine B. 04/01/2000, Vol. 80 Issue 4.
Database:	Academic Search Ultimate

Description
ISSN:	13642812
DOI:	10.1080/13642810008209772