APA (7th ed.) Citation

Nipoti, R., & Parisini, A. (2000). Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient. Philosophical Magazine B, 80(4), . https://doi.org/10.1080/13642810008209772

Chicago Style (17th ed.) Citation

Nipoti, R., and A. Parisini. "Structural Characterization of Ar[sup +] -ion-amorphized 6H-SiC Wafers Annealed at 1100[sup O] C in N[sub 2] or Wet O[sub 2] Ambient." Philosophical Magazine B 80, no. 4 (2000). https://doi.org/10.1080/13642810008209772.

MLA (9th ed.) Citation

Nipoti, R., and A. Parisini. "Structural Characterization of Ar[sup +] -ion-amorphized 6H-SiC Wafers Annealed at 1100[sup O] C in N[sub 2] or Wet O[sub 2] Ambient." Philosophical Magazine B, vol. 80, no. 4, 2000, https://doi.org/10.1080/13642810008209772.