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Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient.

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Title: Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient.
Authors: Nipoti, R., Parisini, A.
Source: Philosophical Magazine B. 04/01/2000, Vol. 80 Issue 4.
Database: Academic Search Ultimate
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  Data: Structural characterization of Ar[sup +] -ion-amorphized 6H-SiC wafers annealed at 1100[sup o] C in N[sub 2] or wet O[sub 2] ambient.
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  Data: <searchLink fieldCode="JN" term="%22Philosophical+Magazine+B%22">Philosophical Magazine B</searchLink>. 04/01/2000, Vol. 80 Issue 4.
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