Magnetotransport of delta-doped In[sub 0.57]Ga[sub 0.43]As on InP(001) grown between 390 and 575° C by molecular beam epitaxy.

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Bibliographic Details
Title: Magnetotransport of delta-doped In[sub 0.57]Ga[sub 0.43]As on InP(001) grown between 390 and 575° C by molecular beam epitaxy.
Authors: Zervos, Matthew, Bryant, Adam, Elliott, Martin, Beck, Mathias, Ilegems, Marc
Source: Applied Physics Letters. 5/18/1998, Vol. 72 Issue 20. 2 Charts, 2 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00036951
DOI:10.1063/1.121430