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Valence band structure of strained Si/(111)Si1− xGe x.

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Title: Valence band structure of strained Si/(111)Si1− xGe x.
Authors: Song, JianJun1 wmshhsong@tom.com, Zhang, HeMing1, Hu, HuiYong1, Dai, XianYing1, Xuan, RongXi1
Source: SCIENCE CHINA Physics, Mechanics & Astronomy. Mar2010, Vol. 53 Issue 3, p454-457. 4p.
Database: Academic Search Ultimate
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  Data: Valence band structure of strained Si/(111)Si<subscript>1− x</subscript>Ge<subscript> x</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Song%2C+JianJun%22">Song, JianJun</searchLink><relatesTo>1</relatesTo><i> wmshhsong@tom.com</i><br /><searchLink fieldCode="AR" term="%22Zhang%2C+HeMing%22">Zhang, HeMing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hu%2C+HuiYong%22">Hu, HuiYong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dai%2C+XianYing%22">Dai, XianYing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Xuan%2C+RongXi%22">Xuan, RongXi</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22SCIENCE+CHINA+Physics%2C+Mechanics+%26+Astronomy%22">SCIENCE CHINA Physics, Mechanics & Astronomy</searchLink>. Mar2010, Vol. 53 Issue 3, p454-457. 4p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=50114321
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        Value: 10.1007/s11433-010-0093-2
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              Text: Mar2010
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