Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.

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Bibliographic Details
Title: Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.
Authors: Mikhelashvili, V., Eisenstein, G., Edelmann, F.
Source: Journal of Applied Physics. 11/15/2001, Vol. 90 Issue 10, p5447. 3p. 5 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00218979
DOI:10.1063/1.1413239