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Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.

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Bibliographic Details
Title: Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.
Authors: Mikhelashvili, V., Eisenstein, G., Edelmann, F.
Source: Journal of Applied Physics. 11/15/2001, Vol. 90 Issue 10, p5447. 3p. 5 Graphs.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 5439420
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.
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  Data: <searchLink fieldCode="AR" term="%22Mikhelashvili%2C+V%2E%22">Mikhelashvili, V.</searchLink><br /><searchLink fieldCode="AR" term="%22Eisenstein%2C+G%2E%22">Eisenstein, G.</searchLink><br /><searchLink fieldCode="AR" term="%22Edelmann%2C+F%2E%22">Edelmann, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 11/15/2001, Vol. 90 Issue 10, p5447. 3p. 5 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=5439420
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        Value: 10.1063/1.1413239
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 5447
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      – TitleFull: Characteristics of electron-beam-gun-evaporated Er[sub 2]O[sub 3] thin films as gate dielectrics for silicon.
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            NameFull: Mikhelashvili, V.
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            NameFull: Eisenstein, G.
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            NameFull: Edelmann, F.
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              Text: 11/15/2001
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              Y: 2001
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