A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method.
Saved in:
| Title: | A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method. |
|---|---|
| Authors: | I-Lin Lu1, Yuh-Renn Wu1, Jasprit Singh2 yrwu@cc.ee.ntu.edu.tw |
| Source: | Journal of Applied Physics. Dec2010, Vol. 108 Issue 12, p124508. 6p. 1 Diagram, 1 Chart, 7 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.3524544 |
