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On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.

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Bibliographic Details
Title: On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.
Authors: Soni, R.1, Meuffels, P.1, Staikov, G.1, Weng, R.1, Kügeler, C.2, Petraru, A.3, Hambe, M.3, Waser, R.1, Kohlstedt, H.3
Source: Journal of Applied Physics. Sep2011, Vol. 110 Issue 5, p054509. 10p.
Database: Academic Search Ultimate
Description
ISSN:00218979
DOI:10.1063/1.3631013