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On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.

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Title: On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.
Authors: Soni, R.1, Meuffels, P.1, Staikov, G.1, Weng, R.1, Kügeler, C.2, Petraru, A.3, Hambe, M.3, Waser, R.1, Kohlstedt, H.3
Source: Journal of Applied Physics. Sep2011, Vol. 110 Issue 5, p054509. 10p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 65458512
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. Sep2011, Vol. 110 Issue 5, p054509. 10p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=65458512
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      – Type: doi
        Value: 10.1063/1.3631013
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 10
        StartPage: 054509
    Titles:
      – TitleFull: On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices.
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            NameFull: Soni, R.
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            NameFull: Meuffels, P.
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              M: 09
              Text: Sep2011
              Type: published
              Y: 2011
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              Value: 110
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              Value: 5
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            – TitleFull: Journal of Applied Physics
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