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The Growth of GaN on Si by the Beam Flux Modulation.

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Bibliographic Details
Title: The Growth of GaN on Si by the Beam Flux Modulation.
Authors: Roh, C. H.1, Ha, M. W.1, Song, H. J.1, Choi, H. G.1, Lee, J. H.1, Ra, Y. W.1, Hahn, C. K.1
Source: AIP Conference Proceedings. 12/22/2011, Vol. 1399 Issue 1, p175-176. 2p.
Database: Academic Search Ultimate
Description
ISSN:0094243X
DOI:10.1063/1.3666313