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The Growth of GaN on Si by the Beam Flux Modulation.

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Title: The Growth of GaN on Si by the Beam Flux Modulation.
Authors: Roh, C. H.1, Ha, M. W.1, Song, H. J.1, Choi, H. G.1, Lee, J. H.1, Ra, Y. W.1, Hahn, C. K.1
Source: AIP Conference Proceedings. 12/22/2011, Vol. 1399 Issue 1, p175-176. 2p.
Database: Academic Search Ultimate
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  Availability: 0
Header DbId: asn
DbLabel: Academic Search Ultimate
An: 70099785
AccessLevel: 2
PubType: Conference
PubTypeId: conference
PreciseRelevancyScore: 0
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  Data: The Growth of GaN on Si by the Beam Flux Modulation.
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  Data: <searchLink fieldCode="JN" term="%22AIP+Conference+Proceedings%22">AIP Conference Proceedings</searchLink>. 12/22/2011, Vol. 1399 Issue 1, p175-176. 2p.
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        Value: 10.1063/1.3666313
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              Text: 12/22/2011
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