Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.

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Bibliographic Details
Title: Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.
Authors: Metzger, T., Hopler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Christiansen, S., Albrecht, M., Strunk, H. P.
Source: Philosophical Magazine A. Apr98, Vol. 77 Issue 4, p1013-1025. 13p.
Database: Academic Search Ultimate
Description
ISSN:01418610
DOI:10.1080/01418619808221225