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Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.

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Title: Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.
Authors: Metzger, T., Hopler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Christiansen, S., Albrecht, M., Strunk, H. P.
Source: Philosophical Magazine A. Apr98, Vol. 77 Issue 4, p1013-1025. 13p.
Database: Academic Search Ultimate
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  Data: Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.
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        Value: 10.1080/01418619808221225
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        Text: English
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      – TitleFull: Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.
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              Text: Apr98
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              Y: 1998
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