Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.
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| Title: | Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2. |
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| Authors: | Yew, Tri-Rung, Reif, Rafael |
| Source: | Journal of Applied Physics. 3/15/1989, Vol. 65 Issue 6, p2500. 8p. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.342796 |
