Structural properties of silicon epitaxy grown at 200–600 °C by electron-beam evaporation in an ultrahigh vacuum system.
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| Title: | Structural properties of silicon epitaxy grown at 200–600 °C by electron-beam evaporation in an ultrahigh vacuum system. |
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| Authors: | Yew, Tri-Rung, Lin, Yung-Jen, Shieh, Ming-Deng, Chen, Cheng-Hsien |
| Source: | Journal of Applied Physics. 5/15/1993, Vol. 73 Issue 10, p4932. 5p. 14 Black and White Photographs, 1 Graph. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.353811 |
