Electrical quality of low-temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate.
Saved in:
| Title: | Electrical quality of low-temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate. |
|---|---|
| Authors: | Burger, W. R., Reif, R. |
| Source: | Journal of Applied Physics. 1/15/1988, Vol. 63 Issue 2, p383. 7p. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.340249 |
