Electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature.

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Bibliographic Details
Title: Electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature.
Authors: Burger, W. R., Reif, R.
Source: Journal of Applied Physics. 1/15/1988, Vol. 63 Issue 2, p368. 15p.
Database: Academic Search Ultimate
Description
ISSN:00218979
DOI:10.1063/1.340248