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Hole mobility enhancement of Si by rhombohedral strain.

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Bibliographic Details
Title: Hole mobility enhancement of Si by rhombohedral strain.
Authors: Song, JianJun1 wmshhsong@tom.com, Zhang, HeMing1, Hu, HuiYong1, Wang, XiaoYan1, Wang, GuanYu1
Source: SCIENCE CHINA Physics, Mechanics & Astronomy. Aug2012, Vol. 55 Issue 8, p1399-1403. 5p.
Database: Academic Search Ultimate
Description
ISSN:16747348
DOI:10.1007/s11433-012-4755-0