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The Effects of Annealing Temperatures on Composition and Strain in SixGe1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

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Title: The Effects of Annealing Temperatures on Composition and Strain in SixGe1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).
Authors: Zainal Abidin, Mastura Shafinaz1 mastura@fke.utm.my, Tahsin Morshed2 mtahsin2@live.utm.my, Hironori Chikita3 h_chikita@nano.ed.kyushu-u.ac.jp, Yuki Kinoshita3 y_kinoshita@nano.ed.kyushu-u.ac.jp, Shunpei Muta3 s_muta@nano.ed.kyushu-u.ac.jp, Anisuzzaman, Mohammad3 maniuz@gmail.com, Jong-Hyeok Park3 j_park@nano.ed.kyushu-u.ac.jp, Ryo Matsumura3 r_matsumura@nano.ed.kyushu-u.ac.jp, Mahmood, Mohamad Rusop4 nanouitm@gmail.com, Taizoh Sadoh3 sadoh@ed.kyushu-u.ac.jp, Hashim, Abdul Manaf2,5 abd_manaf@ic.utm.my
Source: Materials (1996-1944). Feb2014, Vol. 7 Issue 2, p1409-1421. 13p. 1 Color Photograph, 1 Diagram, 4 Graphs.
Database: Academic Search Ultimate
Description
ISSN:19961944
DOI:10.3390/ma7021409