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Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.

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Bibliographic Details
Title: Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.
Authors: Djomeni, Larissa1,2 monica-larissa.djomeni-weleguela@cea.fr, Mourier, Thierry1, Minoret, Stéphane1, Fadloun, Sabrina3, Piallat, Fabien1, Burgess, Steve4, Price, Andrew4, Zhou, Yun4, Jones, Christopher4, Mathiot, Daniel2, Maitrejean, Sylvain1
Source: Microelectronic Engineering. May2014, Vol. 120, p127-132. 6p.
Database: Academic Search Ultimate
Description
ISSN:01679317
DOI:10.1016/j.mee.2013.11.010