Bibliographic Details
| Title: |
A Ka-band SiGe BICMOS power amplifier with 24 dBm output power. |
| Authors: |
Pierco, Ramses1, Torfs, Guy1, De Keulenaer, Timothy1, Vandecasteele, Bjorn2, Missinne, Jeroen2, Bauwelinck, Johan3 |
| Source: |
Microwave & Optical Technology Letters. Mar2015, Vol. 57 Issue 3, p718-722. 5p. 7 Diagrams, 1 Chart, 3 Graphs. |
| Subjects: |
BiCMOS memory circuits, Electric power, Silicon compounds, Electric transformers, Electric potential |
| Abstract: |
ABSTRACT A power amplifier (PA) with a saturated output power of 24.1 dBm at 32 GHz, fabricated in a 250 nm SiGe BiCMOS technology, is presented. This PA operates in Class AB and achieves a power-added efficiency (PAE) of 7.2% with a gain of approximately 25 dB and a die area of 1.70 mm2. A differential cascode output stage with a self-shielded balun is used, allowing to maximize the output voltage swing. The driver stage consists of translinear loops to bias and linearize the output stage while a transformer-type power combiner is implemented to achieve broadband on-chip power combination. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:718-722, 2015 [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
