Bibliographic Details
| Title: |
Accurate electro-thermal model of avalanching junctions subject to ESD currents. |
| Authors: |
Codecasa, L., D'Amore, D., Maffezzoni, P. |
| Source: |
Electronics Letters (Institution of Engineering & Technology). 6/12/2003, Vol. 39 Issue 12, p932-933. 2p. |
| Subjects: |
Semiconductor junctions, Electric discharges |
| Abstract: |
A new electro-thermal model of avalanching silicon junctions subject to the abrupt and large currents of electro-static-discharge (ESD) phenomenon is presented. A reliable model of the avalanching junction is the core element for accurate CAD-based analysis of ESD failures. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
