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Accurate electro-thermal model of avalanching junctions subject to ESD currents.

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Title: Accurate electro-thermal model of avalanching junctions subject to ESD currents.
Authors: Codecasa, L., D'Amore, D., Maffezzoni, P.
Source: Electronics Letters (Institution of Engineering & Technology). 6/12/2003, Vol. 39 Issue 12, p932-933. 2p.
Subjects: Semiconductor junctions, Electric discharges
Abstract: A new electro-thermal model of avalanching silicon junctions subject to the abrupt and large currents of electro-static-discharge (ESD) phenomenon is presented. A reliable model of the avalanching junction is the core element for accurate CAD-based analysis of ESD failures. [ABSTRACT FROM AUTHOR]
Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 10061452
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Accurate electro-thermal model of avalanching junctions subject to ESD currents.
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Institution+of+Engineering+%26+Technology%29%22">Electronics Letters (Institution of Engineering & Technology)</searchLink>. 6/12/2003, Vol. 39 Issue 12, p932-933. 2p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+junctions%22">Semiconductor junctions</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+discharges%22">Electric discharges</searchLink>
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  Data: A new electro-thermal model of avalanching silicon junctions subject to the abrupt and large currents of electro-static-discharge (ESD) phenomenon is presented. A reliable model of the avalanching junction is the core element for accurate CAD-based analysis of ESD failures. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Electronics Letters (Institution of Engineering & Technology) is the property of Institution of Engineering & Technology and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1049/el:20030541
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      – Code: eng
        Text: English
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        PageCount: 2
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      – SubjectFull: Semiconductor junctions
        Type: general
      – SubjectFull: Electric discharges
        Type: general
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      – TitleFull: Accurate electro-thermal model of avalanching junctions subject to ESD currents.
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            NameFull: Codecasa, L.
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              Text: 6/12/2003
              Type: published
              Y: 2003
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              Value: 39
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            – TitleFull: Electronics Letters (Institution of Engineering & Technology)
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