Bibliographic Details
| Title: |
Study of the mechanism of multi-channel discharge in semiconductor processing by WEDM. |
| Authors: |
Chen, Hao-ran1, Liu, Zhi-dong1 liutim@nuaa.edu.cn, Huang, Sai-juan1, Pan, Hui-jun1, Qiu, Ming-bo1 |
| Source: |
Materials Science in Semiconductor Processing. Apr2015, Vol. 32, p125-130. 6p. |
| Subjects: |
Semiconductors, Electrochemical electrodes, Electric wire, Power resources, Electric resistors |
| Abstract: |
This paper studies the discharge characteristics of metal and semiconductor processing by WEDM, proves single-channel discharge in metal EDM and finds multi-channel discharge phenomenon in semiconductor EDM. The mechanism has been analyzed in this paper. The main reason for multi-channel discharge is the existence of body resistor and contact barrier; thus, there still exists a high potential difference between the electrode wire and the surrounding area of discharge points after the dielectric breakdown, and this potential difference can form a second discharge. The effects of multi-channel discharge on the processing efficiency of semiconductor EDM are also studied. The energy of each discharge channel is roughly equal, and thus the multi-channel discharge at the same time can increase the energy utilization ratio of the pulsed power supply and improve the processing efficiency. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |