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Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions.

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Title: Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions.
Authors: Shenouda, S.S.1,2 shenouda_physics@yahoo.com, Molnar, G.1, Langer, G.A.1, Katona, G.L.1, Kristály, F.3, Beke, D.L.1
Source: Microelectronic Engineering. Feb2015, Vol. 134, p14-21. 8p.
Subjects: Chemical kinetics, Nickel, Metals at low temperatures, Chemical reactions, Nanocrystals, Heat treatment of metals
Abstract: Nanocrystalline Ni(20 nm)/crystalline-Si and Ni(20 nm)/amorphous-Si systems were heat treated at 453 K and 473 K for 0.25–2 h. The formation of the reaction layer at the interface and the positions of the individual interfaces were followed by depth profiling using Secondary Neutral Mass Spectrometry and a profilometer. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the Si layer, as well as the average growth kinetics of the product layer containing Ni 2 Si and NiSi phases, were determined in the very early stage of the solid state reaction. The kinetics of the Si and Ni shrinkage followed the parabolic growth law in both systems i.e. the change of the thicknesses were proportional to t 1/2 . In systems with a-Si, at longer annealing times, a layer with composition of about 40% Ni was developed suggesting the formation of the NiSi 2 . This was interpreted by the relatively high diffusivity of Ni in a-Si. Results on the effect of Pt on the enhanced homogeneity of the NiSi phase formed as well as on the growth kinetics are also presented. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Nanocrystalline Ni(20 nm)/crystalline-Si and Ni(20 nm)/amorphous-Si systems were heat treated at 453 K and 473 K for 0.25–2 h. The formation of the reaction layer at the interface and the positions of the individual interfaces were followed by depth profiling using Secondary Neutral Mass Spectrometry and a profilometer. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the Si layer, as well as the average growth kinetics of the product layer containing Ni 2 Si and NiSi phases, were determined in the very early stage of the solid state reaction. The kinetics of the Si and Ni shrinkage followed the parabolic growth law in both systems i.e. the change of the thicknesses were proportional to t 1/2 . In systems with a-Si, at longer annealing times, a layer with composition of about 40% Ni was developed suggesting the formation of the NiSi 2 . This was interpreted by the relatively high diffusivity of Ni in a-Si. Results on the effect of Pt on the enhanced homogeneity of the NiSi phase formed as well as on the growth kinetics are also presented. [ABSTRACT FROM AUTHOR]
ISSN:01679317
DOI:10.1016/j.mee.2015.01.006