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Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions.

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Title: Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions.
Authors: Shenouda, S.S.1,2 shenouda_physics@yahoo.com, Molnar, G.1, Langer, G.A.1, Katona, G.L.1, Kristály, F.3, Beke, D.L.1
Source: Microelectronic Engineering. Feb2015, Vol. 134, p14-21. 8p.
Subjects: Chemical kinetics, Nickel, Metals at low temperatures, Chemical reactions, Nanocrystals, Heat treatment of metals
Abstract: Nanocrystalline Ni(20 nm)/crystalline-Si and Ni(20 nm)/amorphous-Si systems were heat treated at 453 K and 473 K for 0.25–2 h. The formation of the reaction layer at the interface and the positions of the individual interfaces were followed by depth profiling using Secondary Neutral Mass Spectrometry and a profilometer. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the Si layer, as well as the average growth kinetics of the product layer containing Ni 2 Si and NiSi phases, were determined in the very early stage of the solid state reaction. The kinetics of the Si and Ni shrinkage followed the parabolic growth law in both systems i.e. the change of the thicknesses were proportional to t 1/2 . In systems with a-Si, at longer annealing times, a layer with composition of about 40% Ni was developed suggesting the formation of the NiSi 2 . This was interpreted by the relatively high diffusivity of Ni in a-Si. Results on the effect of Pt on the enhanced homogeneity of the NiSi phase formed as well as on the growth kinetics are also presented. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 101340676
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Kinetics of shift of individual interfaces in Ni/Si system during low temperature reactions.
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Feb2015, Vol. 134, p14-21. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Chemical+kinetics%22">Chemical kinetics</searchLink><br /><searchLink fieldCode="DE" term="%22Nickel%22">Nickel</searchLink><br /><searchLink fieldCode="DE" term="%22Metals+at+low+temperatures%22">Metals at low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+reactions%22">Chemical reactions</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+treatment+of+metals%22">Heat treatment of metals</searchLink>
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  Data: Nanocrystalline Ni(20 nm)/crystalline-Si and Ni(20 nm)/amorphous-Si systems were heat treated at 453 K and 473 K for 0.25–2 h. The formation of the reaction layer at the interface and the positions of the individual interfaces were followed by depth profiling using Secondary Neutral Mass Spectrometry and a profilometer. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the Si layer, as well as the average growth kinetics of the product layer containing Ni 2 Si and NiSi phases, were determined in the very early stage of the solid state reaction. The kinetics of the Si and Ni shrinkage followed the parabolic growth law in both systems i.e. the change of the thicknesses were proportional to t 1/2 . In systems with a-Si, at longer annealing times, a layer with composition of about 40% Ni was developed suggesting the formation of the NiSi 2 . This was interpreted by the relatively high diffusivity of Ni in a-Si. Results on the effect of Pt on the enhanced homogeneity of the NiSi phase formed as well as on the growth kinetics are also presented. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Text: English
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      – SubjectFull: Nickel
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      – SubjectFull: Metals at low temperatures
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      – SubjectFull: Chemical reactions
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      – SubjectFull: Heat treatment of metals
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              Text: Feb2015
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