Bibliographic Details
| Title: |
A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process. |
| Authors: |
Chung, Chih-Ping1, Chang-Liao, Kuei-Shu1 |
| Source: |
IEEE Electron Device Letters. Apr2015, Vol. 36 Issue 4, p336-338. 3p. |
| Subjects: |
Tungsten, Erasable programmable read-only memory, Complementary metal oxide semiconductors, Metal insulator semiconductors, Integrated circuits |
| Abstract: |
A highly scalable single poly-silicon multiple time programmable erasable programmable read only memory (EEPROM) with tungsten metallic control gate (W-CG) manufactured by full 0.13~\mu \textm -CMOS process is successfully demonstrated in this letter. Since the coupling ratio of conventional EEPROM cell is reduced with decreasing cell size, a smaller size in W-CG cell with a reduced spacing of CG to floating gate (FG) can obtain a higher coupling ratio and increase programming/erasing window owing to its novel lateral metal-insulator-poly coupling structure. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
