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Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4−xTex (0.1 ≤ x ≤ 0.4).

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Title: Synthesis, crystal structure, and transport properties of Cu2.2Zn0.8SnSe4−xTex (0.1 ≤ x ≤ 0.4).
Authors: Dong, Yongkwan1, Eckert, Brian1, Wang, Hsin2, Zeng, Xiaoyu3, Tritt, Terry M.3, Nolas, George S.1
Source: Dalton Transactions: An International Journal of Inorganic Chemistry. 5/21/2015, Vol. 44 Issue 19, p9014-9019. 6p.
Subjects: Copper compounds synthesis, Stannite, Chalcogenides synthesis, Crystal structure, Rietveld refinement, Tellurium compounds, High temperature chemistry, Thermal conductivity
Abstract: Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Quaternary chalcogenides, particular compounds with the stannite structure-type, are of interest for thermoelectrics applications however tellurium-containing compositions have not been extensively investigated. We report on the synthesis and high temperature thermoelectric properties of p-type stannites Cu2.2Zn0.8SnSe4−xTex (x = 0.1, 0.2, 0.3, and 0.4). The compositions for each specimen were confirmed with a combination of Rietveld refinement and elemental analysis. Hall measurements indicate that holes are the dominant charge carriers in these materials. The electrical resistivity shows little temperature dependence up to 500 K and then increases with increasing temperature. The thermal conductivity decreases with increasing temperature with no indication of increase at higher temperatures suggesting a minimal bipolar diffusion effect in the thermal conductivity although these materials possess relatively small band-gaps as compared to that of other stannite compositions. A maximum ZT value of 0.56 was obtained at 700 K for Cu2.2Zn0.8SnSe3.7Te0.3 due to a relatively high Seebeck coefficient and low thermal conductivity. [ABSTRACT FROM AUTHOR]
ISSN:14779226
DOI:10.1039/c5dt00910c