Bibliographic Details
| Title: |
Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy. |
| Authors: |
Petit, Matthieu1 matthieu.petit@univ-amu.fr, Michez, Lisa1, Dutoit, Charles-Emmanuel2, Bertaina, Sylvain2, Dolocan, Voicu O.2, Heresanu, Vasile1, Stoffel, Mathieu3, Le Thanh, Vinh1 |
| Source: |
Thin Solid Films. Aug2015, Vol. 589, p427-432. 6p. |
| Subjects: |
Molecular beam epitaxy, Low temperatures, Manganese compounds, Metallic films, Germanium, Semiconductors |
| Abstract: |
C-doped Mn 5 Ge 3 compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn 5 Ge 3 /Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn 5 Ge 3 and C-doped Mn 5 Ge 3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin film quality. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
