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Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy.

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Title: Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy.
Authors: Petit, Matthieu1 matthieu.petit@univ-amu.fr, Michez, Lisa1, Dutoit, Charles-Emmanuel2, Bertaina, Sylvain2, Dolocan, Voicu O.2, Heresanu, Vasile1, Stoffel, Mathieu3, Le Thanh, Vinh1
Source: Thin Solid Films. Aug2015, Vol. 589, p427-432. 6p.
Subjects: Molecular beam epitaxy, Low temperatures, Manganese compounds, Metallic films, Germanium, Semiconductors
Abstract: C-doped Mn 5 Ge 3 compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn 5 Ge 3 /Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn 5 Ge 3 and C-doped Mn 5 Ge 3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin film quality. [ABSTRACT FROM AUTHOR]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 109104669
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy.
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  Data: <searchLink fieldCode="AR" term="%22Petit%2C+Matthieu%22">Petit, Matthieu</searchLink><relatesTo>1</relatesTo><i> matthieu.petit@univ-amu.fr</i><br /><searchLink fieldCode="AR" term="%22Michez%2C+Lisa%22">Michez, Lisa</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Dutoit%2C+Charles-Emmanuel%22">Dutoit, Charles-Emmanuel</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Bertaina%2C+Sylvain%22">Bertaina, Sylvain</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Dolocan%2C+Voicu+O%2E%22">Dolocan, Voicu O.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Heresanu%2C+Vasile%22">Heresanu, Vasile</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Stoffel%2C+Mathieu%22">Stoffel, Mathieu</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Le+Thanh%2C+Vinh%22">Le Thanh, Vinh</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Aug2015, Vol. 589, p427-432. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Manganese+compounds%22">Manganese compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+films%22">Metallic films</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: C-doped Mn 5 Ge 3 compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn 5 Ge 3 /Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn 5 Ge 3 and C-doped Mn 5 Ge 3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin film quality. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2015.05.068
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 427
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        Type: general
      – SubjectFull: Low temperatures
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      – SubjectFull: Manganese compounds
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      – SubjectFull: Metallic films
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      – SubjectFull: Germanium
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      – SubjectFull: Semiconductors
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      – TitleFull: Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy.
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              Text: Aug2015
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