View in EDS

Mechanisms of plasticity in near-theoretical strength sub-100 nm Si nanocubes.

Saved in:
Bibliographic Details
Title: Mechanisms of plasticity in near-theoretical strength sub-100 nm Si nanocubes.
Authors: Wagner, Andrew J.1, Hintsala, Eric D.1, Kumar, Prashant1, Gerberich, William W.1, Mkhoyan, K. Andre1 mkhoyan@umn.edu
Source: Acta Materialia. Nov2015, Vol. 100, p256-265. 10p.
Subjects: Nanosilicon, Material plasticity, Strength of materials, Solar cells, Microelectromechanical systems, Mechanical properties of metals
Abstract: Silicon is one of the most technologically important materials, used extensively in electronics, solar cells, micro-electro-mechanical systems (MEMS) based devices and more. Yet its mechanical properties are not well understood at the nanoscale where it is often utilized. Experimental measurements under a variety of loading conditions are needed, and compression experiments are particularly lacking. Here, the elastic–plastic response of 20–65 nm cubic Si nanocubes under uniaxial compression is investigated. The purely elastic limit of these nanocubes is observed to be up to 0.07 true strain at 7 GPa true stress with an upper yield point of 0.20 true strain and 11 GPa true stress. Investigation of the nature of dislocations generated during deformation of these nanocubes using post-mortem analysis in the TEM provides evidence that leading partial dislocations are the dominant source of plasticity at this scale. [ABSTRACT FROM AUTHOR]
Copyright of Acta Materialia is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Silicon is one of the most technologically important materials, used extensively in electronics, solar cells, micro-electro-mechanical systems (MEMS) based devices and more. Yet its mechanical properties are not well understood at the nanoscale where it is often utilized. Experimental measurements under a variety of loading conditions are needed, and compression experiments are particularly lacking. Here, the elastic–plastic response of 20–65 nm cubic Si nanocubes under uniaxial compression is investigated. The purely elastic limit of these nanocubes is observed to be up to 0.07 true strain at 7 GPa true stress with an upper yield point of 0.20 true strain and 11 GPa true stress. Investigation of the nature of dislocations generated during deformation of these nanocubes using post-mortem analysis in the TEM provides evidence that leading partial dislocations are the dominant source of plasticity at this scale. [ABSTRACT FROM AUTHOR]
ISSN:13596454
DOI:10.1016/j.actamat.2015.08.029