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Scattering approach to scanning gate microscopy.

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Title: Scattering approach to scanning gate microscopy.
Authors: Jalabert, Rodolfo A.1,2, Weinmann, Dietmar1 dietmar.weinmann@ipcms.unistra.fr
Source: Physica E. Nov2015, Vol. 74, p637-643. 7p.
Subjects: Quantum conduction, Scattering potentials, Microscopy, Quantum perturbations, Quantum transitions
Abstract: We present a perturbative approach to the conductance change caused by a weakly invasive scattering potential in a two-dimensional electron gas. The resulting expressions are used to investigate the relationship between the conductance change measured in scanning gate microscopy as a function of the position of a scattering tip and local electronic quantities like the current density. We use a semiclassical approach to treat the case of a strong hard-wall scatterer in a half-plane facing a reflectionless channel. The resulting conductance change is consistent with the numerically calculated quantum conductance. [ABSTRACT FROM AUTHOR]
Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 110010122
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Scattering approach to scanning gate microscopy.
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  Data: We present a perturbative approach to the conductance change caused by a weakly invasive scattering potential in a two-dimensional electron gas. The resulting expressions are used to investigate the relationship between the conductance change measured in scanning gate microscopy as a function of the position of a scattering tip and local electronic quantities like the current density. We use a semiclassical approach to treat the case of a strong hard-wall scatterer in a half-plane facing a reflectionless channel. The resulting conductance change is consistent with the numerically calculated quantum conductance. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.physe.2015.08.013
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 637
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      – SubjectFull: Quantum conduction
        Type: general
      – SubjectFull: Scattering potentials
        Type: general
      – SubjectFull: Microscopy
        Type: general
      – SubjectFull: Quantum perturbations
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      – SubjectFull: Quantum transitions
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      – TitleFull: Scattering approach to scanning gate microscopy.
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              Text: Nov2015
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