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Fast Resistance Relaxation in Nanostructured La–Ca–Mn–O Films in Pulsed Magnetic Fields.

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Title: Fast Resistance Relaxation in Nanostructured La–Ca–Mn–O Films in Pulsed Magnetic Fields.
Authors: Zurauskiene, Nerija1, Pavilonis, Dainius1, Balevicius, Saulius1, Stankevic, Voitech1, Maneikis, Andrius1, Plausinaitiene, Valentina1, Novickij, Jurij2
Source: IEEE Transactions on Plasma Science. Oct2015 Part 1, Vol. 43 Issue 10, Part 1, p3445-3450. 6p.
Subjects: Electric properties of nanostructured materials, Nanostructured materials industry, Chemical vapor deposition, Magnetic field measurements, Cryoelectronics
Abstract: The results of fast resistance relaxation of nanostructured La1−xCaxMnO3 (LCMO) films with different compositions x (0.218, 0.285, 0.296, 0.41) grown by the metal–organic chemical vapor deposition technique are presented. The fast ( \sim 200\mu \text{s} ) resistance relaxation process observed after the magnetic field pulse was switched off was studied in pulsed fields up to 14 T in the temperature range of 80–170 K. It was found that the remnant resistivity of the fast relaxation process is proportional to the magnetoresistance of the films up to 10 T. The smallest remnant relaxation values were found for the films with highest insulator–metal transition temperature T_{m}$ . It was shown that the fast process could be analyzed using the Kolmogorov–Avrami–Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. It was concluded that LCMO films with $x=0.218$ should be favored for the development of fast pulsed magnetic field sensors operating at cryogenic temperatures. [ABSTRACT FROM PUBLISHER]
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Database: Engineering Source
Description
Abstract:The results of fast resistance relaxation of nanostructured La1−xCaxMnO3 (LCMO) films with different compositions x (0.218, 0.285, 0.296, 0.41) grown by the metal–organic chemical vapor deposition technique are presented. The fast ( \sim 200\mu \text{s} ) resistance relaxation process observed after the magnetic field pulse was switched off was studied in pulsed fields up to 14 T in the temperature range of 80–170 K. It was found that the remnant resistivity of the fast relaxation process is proportional to the magnetoresistance of the films up to 10 T. The smallest remnant relaxation values were found for the films with highest insulator–metal transition temperature T_{m}$ . It was shown that the fast process could be analyzed using the Kolmogorov–Avrami–Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. It was concluded that LCMO films with $x=0.218$ should be favored for the development of fast pulsed magnetic field sensors operating at cryogenic temperatures. [ABSTRACT FROM PUBLISHER]
ISSN:00933813
DOI:10.1109/TPS.2015.2424162